Alsmeier, J.: search on Z-Library

The world's largest scientific articles store. 70,000,000+ articles for free.

Don't use scam websites

1

Technology challenges and solutions for 1Gbit and beyond

Mazure, Carlos, Alsmeier, Johann, Dehm, Christine, Hönlein, Wolfgang

Journal:

Integrated Ferroelectrics

Year:

1998

Language:

english

File:

PDF, 674 KB

english, 1998

2

Subband spacings of quasi-one-dimensional inversion channels on InSb

Alsmeier, J., Sikorski, Ch., Merkt, U.

Journal:

Physical Review B

Year:

1988

Language:

english

File:

PDF, 333 KB

english, 1988

3

Selbsthilfearbeit bei einer seltenen chronischen Erkrankung

G. Alsmeier, D. Rath

Journal:

Der Ophthalmologe

Year:

2007

Language:

german

File:

PDF, 479 KB

german, 2007

4

The transition to quasi one- or zero-dimensionality in laterally periodic mos devices on silicon

J. Alsmeier, E. Batke, J.P. Kotthaus

Journal:

Surface Science

Year:

1990

Language:

english

File:

PDF, 278 KB

english, 1990

5

Field-effect tunable quantum dots on silicon

J. Alsmeier, E. Batke, J.P. Kotthaus

Journal:

Surface Science

Year:

1990

Language:

english

File:

PDF, 224 KB

english, 1990

6

Experimental Determination of the Charge Neutrality Level of Poly[2-methoxy-5-(2′-ethylhexyloxy)- p -phenylene vinylene] (MEH-PPV)

Wang, Wenfeng, Alsmeier, Jan H., Schlaf, Rudy

Journal:

Year:

2013

Language:

english

File:

PDF, 2.55 MB

english, 2013

7

Improved performance of Ge-alloyed CZTGeSSe thin-film solar cells through control of elemental losses

Hages, Charles J., Levcenco, Sergej, Miskin, Caleb K., Alsmeier, Jan H., Abou-Ras, Daniel, Wilks, Regan G., Bär, Marcus, Unold, Thomas, Agrawal, Rakesh

Journal:

Progress in Photovoltaics: Research and Applications

Year:

2015

Language:

english

File:

PDF, 1.61 MB

english, 2015

8

[IEEE 1998 Symposium on VLSI Technology Digest of Technical Papers - Honolulu, HI, USA (9-11 June 1998)] 1998 Symposium on VLSI Technology Digest of Technical Papers (Cat. No.98CH36216) - A 0.21 μm/sup 2/ 7F/sup 2/ trench cell with a locally-open globally-folded dual bitline for 1 Gb/4 Gb DRAM

Radens, C.J., Gruening, U., Weybright, M.E., DeBrosse, J.K., Kleinhenz, R.L., Hoenigschmid, H., Thomas, A.C., Mandelman, J.A., Alsmeier, J., Bronner, G.B.

Year:

1998

Language:

english

File:

PDF, 238 KB

english, 1998

9

[IEEE Symposium on VLSI Technology - Kyoto, Japan (1997.06.12-1997.06.12)] Symposium on VLSI Technology - A Novel 1b Trench DRAM Cell With Raised Shallow Trench Isolation (RSTI)

Alsmeier,, Kelleher,, Beintner,, Haensch,, Mandelman,, Hoh,, Ninomiya,, Srinivasan,, Bronner,

Year:

1997

Language:

english

File:

PDF, 246 KB

english, 1997

10

[IEEE International Symposium on VLSI Technology Systems and Applications - Taipei, Taiwan (8-10 June 1999)] 1999 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers. (Cat. No.99TH8453) - Array pass transistor design in trench cell for Gbit DRAM and beyond

Li, Y., Mandelman, J., Parries, P., Matsubara, Y., Ye, Q., Rengarajan, R., Alsmeier, J., Flietner, B., Wheeler, D., Akatsu, H., Divakaruni, R., Mohler, R., Sunouchi, K., Bronner, G., Chen, T.C.

Year:

1999

Language:

english

File:

PDF, 354 KB

english, 1999

11

Anomalous narrow channel effect in trench-isolated buried-channel p-MOSFET's

Mandelman, J.A., Alsmeier, J.

Journal:

IEEE Electron Device Letters

Year:

1994

Language:

english

File:

PDF, 283 KB

english, 1994

12

Dimensional excitations in narrow electron inversion channels on Si

Alsmeier, J., Batke, E., Kotthaus, J. P.

Journal:

Physical Review B

Year:

1989

Language:

english

File:

PDF, 175 KB

english, 1989

13

Voltage-tunable quantum dots on silicon

Alsmeier, J., Batke, E., Kotthaus, J. P.

Journal:

Physical Review B

Year:

1990

Language:

english

File:

PDF, 318 KB

english, 1990

14

[IEEE International Symposium on VLSI Technology Systems and Applications - Taipei, Taiwan (8-10 June 1999)] 1999 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers. (Cat. No.99TH8453) - Gate prespacers for high density DRAMs

Divakaruni, R., Weybright, M., Li, Y., Gruening, U., Mandelman, J., Gambino, J., Alsmeier, J., Bronner, G.

Year:

1999

Language:

english

File:

PDF, 285 KB

english, 1999

15

[IEEE IEEE International Electron Devices Meeting - Washington, DC, USA (5-8 Dec. 1993)] Proceedings of IEEE International Electron Devices Meeting - A 0.6 μm/sup 2/ 256 Mb trench DRAM cell with self-aligned BuriEd STrap (BEST)

Nesbit, L., Alsmeier, J., Chen, B., DeBrosse, J., Faheyk, P., Gall, M., Gambino, J., Gernhard, S., Ishiuchi, H., Kleinhenz, R., Mandelman, J., Mii, T., Morikado, M., Nitayama, A., Parke, S., Wong, H.,

Year:

1993

Language:

english

File:

PDF, 374 KB

english, 1993

16

Direct observation of an inhomogeneous chlorine distribution in CH 3 NH 3 PbI 3−x Cl x layers: surface depletion and interface enrichment

Starr, David E., Sadoughi, Golnaz, Handick, Evelyn, Wilks, Regan G., Alsmeier, Jan H., Köhler, Leonard, Gorgoi, Mihaela, Snaith, Henry J., Bär, Marcus

Journal:

Energy & Environmental Science

Year:

2015

Language:

english

File:

PDF, 1021 KB

english, 2015

17

SPIE Proceedings [SPIE SPIE Solar Energy + Technology - San Diego, California, United States (Sunday 17 August 2014)] Thin Films for Solar and Energy Technology VI - Microcrystalline silicon oxides for silicon-based solar cells: impact of the O/Si ratio on the electronic structure

Eldada, Louay A., Heben, Michael J., Bär, M., Starr, D. E., Lambertz, A., Holländer, B., Alsmeier, J.-H., Weinhardt, L., Blum, M., Gorgoi, M., Yang, W., Wilks, R. G., Heske, C.

Year:

2014

Language:

english

File:

PDF, 209 KB

english, 2014

18

Determination of the charge neutrality level of poly(3-hexylthiophene)

Wang, Wenfeng, Alsmeier, Jan H., Wolak, Matthäus, Schlaf, Rudy

Journal:

The Journal of Chemical Physics

Year:

2013

Language:

english

File:

PDF, 2.22 MB

english, 2013

19

Letter to the Editor: Pregnancy and von Hippel-Lindau disease

Frantzen, Carlijn, van Asselt, Sophie J., Kruizinga, Roeliene C., Abadie, Caroline, Coupier, Isabelle, Richard, Stéphane, Alsmeier, Gerhard, Graff, Joyce W., van Pampus, Mariëlle G., Giles, Rachel H.,

Journal:

Journal of Neurosurgery

Year:

2013

Language:

english

File:

PDF, 3.35 MB

english, 2013

20

Potassium Postdeposition Treatment-Induced Band Gap Widening at Cu(In,Ga)Se 2 Surfaces – Reason for Performance Leap?

Handick, Evelyn, Reinhard, Patrick, Alsmeier, Jan-Hendrik, Köhler, Leonard, Pianezzi, Fabian, Krause, Stefan, Gorgoi, Mihaela, Ikenaga, Eiji, Koch, Norbert, Wilks, Regan G., Buecheler, Stephan, Tiwari

Journal:

ACS Applied Materials & Interfaces

Year:

2015

Language:

english

File:

PDF, 862 KB

english, 2015

21

Zn–Se–Cd–S Interlayer Formation at the CdS/Cu 2 ZnSnSe 4 Thin-Film Solar Cell Interface

Bär, Marcus, Repins, Ingrid, Weinhardt, Lothar, Alsmeier, Jan-Hendrik, Pookpanratana, Sujitra, Blum, Monika, Yang, Wanli, Heske, Clemens, Wilks, Regan G., Noufi, Rommel

Journal:

ACS Energy Letters

Year:

2017

Language:

english

File:

PDF, 1.47 MB

english, 2017

22

The CdS/low-band gap kesterite thin-film solar cell absorber heterojunction – energy level alignment and dominant recombination process

Bär, Marcus, Schnabel, Thomas, Alsmeier, Jan-Hendrik, Krause, Stefan, Koch, Norbert, Wilks, Regan G., Ahlswede, Erik

Journal:

ACS Applied Energy Materials

Year:

2018

Language:

english

File:

PDF, 593 KB

english, 2018